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产品信息
The NCE3010S uses advanced trench technology and
design to provide excellent R DS(ON) with low gate charge. It
design to provide excellent R DS(ON) with low gate charge. It
can be used in a wide variety of applications.
V DS =30V,I D =10A
R DS(ON) < 12mΩ @ V GS =10V
R DS(ON) <16mΩ @ V GS =4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply